document number: 88916 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 19-apr-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 low v f high current density surface mount schottky barrier rectifiers ss2p2l, ss2p3l vishay general semiconductor new product typical applications for use in low voltage high frequency inverters, freewheelling, dc/dc converte rs, and polarity protection applications. features ? very low profile - typical height of 1.0 mm ? ideal for automated placement ? low forward voltage drop, low power losses ? high efficiency ? low thermal resistance ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to ie c 61249-2-21 definition mechanical data case: do-220aa (smp) molding compound meets ul 94 v-0 flammabi lity rating base p/n-m3 - halogen-free, rohs compliant, andcommercial grade base p/nhm3 - halogen-free, rohs compliant, and automotive grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 m3 suffix meets jesd 201 class 1a whisker test, hm3 suffix meets jesd 201 class 2 whisker test polarity: color band denotes the cathode end primary characteristics i f(av) 2.0 a v rrm 20 v, 30 v i fsm 50 a e as 11.25 mj v f 0.45 v t j max. 150 c do-220aa ( s mp) e s mp ? s eries maximum ratings (t a = 25 c unless otherwise noted) parameter symbol ss2p2l ss2p3l unit device marking code 22l 23l maximum repetive peak reverse voltage v rrm 20 30 v maximum average forward rectified current (fig. 1) i f(av) 2.0 a peak forward surge current 10 ms single half sine-wave superimposed on rated load i fsm 50 a non-repetitive avalanche energy at i as = 1.5 a, l = 10 mh, t j = 25 c e as 11.25 mj voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction and storage temperature range t j , t stg - 55 to + 150 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 88916 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 19-apr-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ss2p2l, ss2p3l vishay general semiconductor new product notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 40 ms note (1) th ermal resistance from junction to ambien t and junction to lead mounted on p.c.b. with 5.0 mm x 5.0 mm copper pad areas. r ? jl is measured at the terminal of cathode band. r ? jc is measured at the top center of the body note (1) automotive grade ratings and characteristics curves (t a = 25 ? c unless otherwise noted) fig. 1 - forward current derating curve fig. 2 - maximum non-repetitive pe ak forward surge current electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit maximum instantaneous forward voltage i f = 2 a t j = 25 c v f (1) 0.45 0.50 v i f = 2 a t j = 125 c 0.38 0.45 maximum reverse current at rated v r t j = 25 c i r (2) - 200 a t j = 125 c 9.0 20 ma typical junction capacitance 4.0 v, 1 mhz c j 130 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol ss2p2l ss2p3l unit typical thermal resistance r ? ja (1) 115 c/w r ? jl (1) 15 r ? jc (1) 20 ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode ss2p3l-m3/84a 0.024 84a 3000 7" diam eter plastic tape and reel ss2p3l-m3/85a 0.024 85a 10 000 13" di ameter plastic tape and reel ss2p3lhm3/84a (1) 0.024 84a 3000 7" diameter plastic tape and reel ss2p3lhm3/85a (1) 0.024 85a 10 000 13" diameter plastic tape and reel 0 2.4 80 90 100 110 120 130 140 150 1.6 2.0 0.4 0.8 1.2 t l mea s ured at the cathode band terminal average forwar d rectified current (a) lead temperature (c) peak forward s urge current (a) number of cycle s at 50 hz 1 10 100 10 20 30 0 40 50
document number: 88916 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 19-apr-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ss2p2l, ss2p3l vishay general semiconductor new product fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse leakage characteristics fig. 5 - typical j unction capacitance fig. 6 - typical transient thermal impedance package outline dimensions in inches (millimeters) 0.1 0.3 0.5 0.7 0.9 1.1 1.3 0.1 10 1 100 in s tantaneou s forward voltage (v) in s tantaneou s forward current (a) t j = 150 c t j = 125 c t j = 25 c 20 40 60 80 100 0.1 1 10 100 1000 10 30 50 70 90 100 000 10 000 t j = 150 c t j = 125 c t j = 25 c percent of rated peak rever s e voltage (%) in s tantaneou s rever s e leakage current (a) 0.1 10 1 100 10 100 1000 rever s e voltage (v) junction cap acitance (p f) 0.01 10 1 100 1 10 100 0.1 1000 t - pul s e duration ( s ) tran s ient thermal impedance (c/w) do-220aa ( s mp) cathode band 0.086 (2.18) 0.074 (1.88) 0.142 (3.61) 0.126 (3.19) 0.158 (4.00) 0.146 (3.70) 0.013 (0.35) 0.004 (0.10) 0.012 (0.30) 0.000 (0.00) 0.018 (0.45) 0.006 (0.15) 0.045 (1.15) 0.033 (0.85) 0.036 (0.91) 0.024 (0.61) 0.032 (0.80) 0.016 (0.40) 0.103 (2.60) 0.087 (2.20) 0.053 (1.35) 0.041 (1.05) 0.012 (0.30) ref. 0.100 (2.54) 0.105 (2.67) 0.025 (0.635) 0.030 (0.762) 0.050 (1.27)
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